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The thin-film SiGe is considered as promising candidate
to meet the outstanding need for photovoltaic applications with
enhanced adsorption characteristics and improved conversion
efficiency [1-6].In this work we propose ,AMPS-1D (Analysis of
Microelectronic and photonic structure) developed at
Pennsylvania State University program software has been used to
study to describe the influence of the front and back surface
recombination velocity on silicon (window and BSF) and the
doping emitter layer material parameters on the properties of
SiGe solar cells the variation of parameters photovoltaic