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    Journal
    Name: Microelectronics Reliability
    Year: 2007
    Volume: 47
    Number: 2
    DBLP: db/journals/mr/mr47.html
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    Below you find the publications assigned to this venue.

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    Conference paper
    I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, Mikhail I. Vexler.
    Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Markus Karner, Andreas Gehring, M. Wagner, R. Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr.
    VSP - A gate stack analyzer.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Gilles Reimbold, J. Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, F. Martin.
    Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Martin Lemberger, A. Baunemann, Anton J. Bauer.
    Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Octavian Buiu, Steve Hall, O. Engstrom, B. Raeissi, M. Lemme, Paul K. Hurley, K. Cherkaoui.
    Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Salvador Dueñas, Helena Castán, H. García, L. Bailón, K. Kukli, T. Hatanpää, Mikko Ritala, Markku Leskelä.
    Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Liliana Caristia, Giuseppe Nicotra, Corrado Bongiorno, Nicola Costa, Sebastiano Ravesi, Salvo Coffa, Riccardo De Bastiani, Maria Grazia Grimaldi, Corrado Spinella.
    The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Yosef Raskin, Asaad Salameh, David Betel, Yakov Roizin.
    Reliability of HTO based high-voltage gate stacks for flash memories.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    S. B. Evseev.
    Eyring acceleration model in thick nitride/oxide dielectrics.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Conference paper
    Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer.
    Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
    Microelectronics Reliability 2007, Volume 47 (0) 2007
    Show item 1 to 10 of 370  

    Your query returned 370 matches in the database.